Manipulating the electronic structure of spin-orbit coupled 5d- correlated matters by tailoring superlattices

Speaker
沈大伟 教授
Affiliation
中国科学院上海微系统所
Time
2018-07-16 (Mon) 10:00
Location
上海研究院4号楼331会议室
Abstract

In this talk, I will introduce how to fabricate, characterize and manipulate the electronic structure of artificial 5d-transition metal oxide epitaxial films by the combo of oxide molecular beam epitaxy (OMBE), in-situ angle-resolved photoemission spectroscopy (ARPES) and X-ray magnetic circular dichroism (XMCD) techniques. Especially, I will present the state-of-the-art MBE technique in engineering artificial oxide superlattices.

We systematically studied the low-energy electronic structure of SrIrO3 films, in which the conspicuous non-trivial topological and many-body physics were revealed. Also, we have fabricated a series of high-quality [(SrIrO3)m/(SrTiO3)]n/SrTiO3(100) superlattices using the layer-by-layer OMBE growth method, and consequently realized the emergent interfacial magnetism and metal-insulator transition (MIT) by artificial dimensionality control of iridates. The mechanism of this MIT and the elemental specificity of magnetism were then investigated by the in-situ ARPES system and XMCD, respectively. Our results could provide a comprehensive understanding of the phase transition in this spin-orbit Mott insulator and demonstrate a potential new route to control the electronic properties of nonpolar oxide heterostructures.