Novel semiconductor materials and nanostructures grown by MBE for optoelectronic applications

庄乾栋 教授
Lancaster University
2018-03-30 (周五) 10:00

Nanostructured semiconductor materials have attracted increasing attention in the last decade due to their unique functionalities and the promising potential as new building blocks for next generation devices. Of particular interest is the III-V compound semiconductor nanostructures such as quantum dots, nanowires and their integration with Si platform or newly emerged 2D materials. This talk will present our recent research outcomes on several novel semiconductor nanostructures, from quantum dots synthesised by novel epitaxial techniques to narrow bandgap nanowires and hybrid material systems. Fundamental properties and device applications in lasers, LEDs, photodetectors and quantum technology will be discussed.