霍永恒

职称
邮件
yongheng@ustc.edu.cn
电话
地址
上海市浦东新区秀浦路99号,中国科学技术大学上海研究院,201315
个人简介

霍永恒,中国科学技术大学教授,先后入选国家青年特聘专家、上海市特聘专家等。2006.07于天津大学获学士学位,2011.01于中科院半导体所获博士学位。2011.02-2015.03在德国莱布尼茨固态和材料研究所(IFW Dresden)工作,先后任博士后(IFW Scholarship)和分子束外延实验室负责人(Scientist)。2015.04-2016.06在奥地利林茨大学任高级研究员(Senior Researcher),负责搭建III/V分子束外延系统。2016.07到中国科学技术大学工作。多年专注于量子信息材料、器件及相关物理问题的研究。首次实现了基态为轻空穴的半导体量子点,可直接发射纠缠光子对的(001)GaAs量子点,以及用于可调谐电泵浦高速单光子源和纠缠光子源的量子光源材料。基于其制备的量子点样品还目前保持着最高的纠缠保真度记录,以及单光子源和纠缠光子源综合性能最优的记录已在Science,Nature Physics,Nature Photonics,Physical Review Letters, Nature Communications, Nano Letters,PRB,APL等发表论文30多篇,承担国家和省市项目多项。

他的研究小组目前致力于利用分子束外延和芯片微纳加工技术研制核心量子材料与器件,包括:(1)用于光量子计算的确定性半导体量子点单光子源和纠缠光子源;(2)用于超导量子计算机芯片材料和量子比特器件;(3)量子精密测量关键器件,如冷原子光钟超稳腔的低噪高反膜等。目前已经在中国科学技术大学建立了完整的量子材料与器件研究平台,包括多腔互联的分子束外延设备、各类量子芯片微纳加工设备、材料与器件性能测试设备等。

相关论文

  • Huo, Y. -H., Kˇrápek, V., Schmidt, O. G. & Rastelli, A. Spontaneous brightening of dark excitons in GaAs/AlGaAs quantum dots near a cleaved facet. Physical Review B 95, 1-8 (2017).
  • Jöns, K. D., Stensson, K., Reindl, M., Swillo, M., Huo, Y. -H., Zwiller, V., Rastelli, A., Trotta, R. & Björk, G. Two-photon interference from two blinking quantum emitters. Physical Review B 96, 1-10 (2017).
  • Zhang, J., Huo, Y. -H., Ding, F. & Schmidt, O. Energy-tunable single-photon light-emitting diode by strain fields. Applied Physics B 122, 7 (2016).
  • Stephan, D., Bhattacharyya, J., Huo, Y. -H., Schmidt, O., Rastelli, A., Helm, M. & Schneider, H. Inter-sublevel dynamics in single InAs/GaAs quantum dots induced by strong terahertz excitation. Applied Physics Letters 108, 082107 (2016).
  • Jahn, J. -P., Munsch, M., eguin, L., Kuhlmann, A., Renggli, M., Huo, Y. -H., Ding, F., Trotta, R., Reindl, M., Schmidt, O., Rastelli, A., Treutlein, P. & Warburton, R. Publisher s Note: An artificial Rb atom in a semiconductor with lifetime-limited linewidth [Phys. Rev. B 92 , 245439 (2015)]. Physical Review B 93, 159905 (2016).
  • Zhang, H., Huo, Y. -H., Lindfors, K., Chen, Y., Schmidt, O., Rastelli, A. & Lippitz, M. Narrow-line self-assembled GaAs quantum dots for plasmonics. Applied Physics Letters 106, 101110 (2015).
  • Jahn, J. -P., Munsch, M., eguin, L., Kuhlmann, A., Renggli, M., Huo, Y. -H., Ding, F., Trotta, R., Reindl, M., Schmidt, O., Rastelli, A., Treutlein, P. & Warburton, R. An artificial Rb atom in a semiconductor with lifetime-limited linewidth. Physical Review B 92, 245439 (2015).
  • Zhang, J., Wildmann, J., Ding, F., Trotta, R., Huo, Y. -H., Zallo, E., Huber, D., Rastelli, A. & Schmidt, O. High yield and ultrafast sources of electrically triggered entangled-photon pairs based on strain-tunable quantum dots. Nature Communications 6, 10067 (2015).
  • Fehrenbacher, M., Winnerl, S., Schneider, H., Doering, J., Kehr, S., Eng, L., Huo, Y. -H., Schmidt, O., Yao, K., Liu, Y. & Helm, M. Plasmonic Superlensing in Doped GaAs. Nano Letters 15, 1057-1061 (2015).
  • Zhang, J., Huo, Y. -H., Rastelli, A., Zopf, M., Hoefer, B., Chen, Y., Ding, F. & Schmidt, O. Single Photons On-Demand from Light-Hole Excitons in Strain-Engineered Quantum Dots. Nano Letters 15, 422-427 (2015).