霍永恒

职称
邮件
yongheng@ustc.edu.cn
电话
地址
上海市浦东新区秀浦路99号,中国科学技术大学上海研究院,201315
个人简介

霍永恒,2006年7月于天津大学获学士学位,2011年1月于中科院半导体所获博士学位。2011年2月至2015年3月在德国莱布尼茨固态和材料研究所(IFW Dresden)工作,先后任博士后(IFW Scholarship)和分子束外延负责人(Scientist)。2015年4月到2016年6月在奥地利林茨大学任高级研究员(Senior Researcher),负责搭建III/V分子束外延系统。2016年7月回国到中国科学技术大学工作。 10余年来专注于固态量子材料、器件及相关物理问题的研究。首次实现了基态为轻空穴的半导体量子点材料,可直接发射纠缠光子对的(001)GaAs量子点,以及用于可调谐电泵浦高速单光子源和纠缠光子源的量子光源材料等。已在Nature Physics等期刊发表论文30篇。他的研究小组目前致力于利用分子束外延和微纳加工技术研制新型固态量子材料与器件,包括高亮度单光子源和纠缠光子源,以及用于超导量子器件的高品质超导薄膜材料等。

相关论文

  • Li, J. -P., Qin, J., Chen, A., Duan, Z. -C., Yu, Y., Huo, Y. -H., Hofling, S., Lu, C. -Y., Chen, K. & Pan, J. -W. Multiphoton Graph States from a Solid-State Single-Photon Source. ACS Photonics 7, 1603-1610 (2020).
  • Duan, Z. -C., Li, J. -P., Qin, J., Yu, Y., Huo, Y. -H., Hofling, S., Lu, C. -Y., Le Liu, N. -, Chen, K. & Pan, J. -W. Proof-of-principle demonstration of compiled Shor s algorithm using a quantum dot single-photon source. Optics Express 28, 18917 (2020).
  • Wang, H., He, Y. -M., Chung, T., Hu, H., Yu, Y., Chen, S., Ding, X., Chen, M., Qin, J., Yang, X., Liu, R. -ze, Duan, Z., Li, J., Gerhardt, S., Winkler, K., Jurkat, J., Wang, L. -jun, Gregersen, N., Huo, Y. -H., Dai, Q., Yu, S., Sven, ofling, Lu, C. -Y. & Pan, J. -W. Towards optimal single-photon sources from polarized microcavities. Nature Photonics 13, 770 (2019).
  • Zhang, J., Huo, Y. -H., Ding, F. & Schmidt, O. Energy-tunable single-photon light-emitting diode by strain fields. Applied Physics B 122, 7 (2016).
  • Stephan, D., Bhattacharyya, J., Huo, Y. -H., Schmidt, O., Rastelli, A., Helm, M. & Schneider, H. Inter-sublevel dynamics in single InAs/GaAs quantum dots induced by strong terahertz excitation. Applied Physics Letters 108, 082107 (2016).
  • Jahn, J. -P., Munsch, M., eguin, L., Kuhlmann, A., Renggli, M., Huo, Y. -H., Ding, F., Trotta, R., Reindl, M., Schmidt, O., Rastelli, A., Treutlein, P. & Warburton, R. Publisher s Note: An artificial Rb atom in a semiconductor with lifetime-limited linewidth [Phys. Rev. B 92 , 245439 (2015)]. Physical Review B 93, 159905 (2016).
  • Zhang, H., Huo, Y. -H., Lindfors, K., Chen, Y., Schmidt, O., Rastelli, A. & Lippitz, M. Narrow-line self-assembled GaAs quantum dots for plasmonics. Applied Physics Letters 106, 101110 (2015).
  • Jahn, J. -P., Munsch, M., eguin, L., Kuhlmann, A., Renggli, M., Huo, Y. -H., Ding, F., Trotta, R., Reindl, M., Schmidt, O., Rastelli, A., Treutlein, P. & Warburton, R. An artificial Rb atom in a semiconductor with lifetime-limited linewidth. Physical Review B 92, 245439 (2015).
  • Zhang, J., Wildmann, J., Ding, F., Trotta, R., Huo, Y. -H., Zallo, E., Huber, D., Rastelli, A. & Schmidt, O. High yield and ultrafast sources of electrically triggered entangled-photon pairs based on strain-tunable quantum dots. Nature Communications 6, 10067 (2015).
  • Fehrenbacher, M., Winnerl, S., Schneider, H., Doering, J., Kehr, S., Eng, L., Huo, Y. -H., Schmidt, O., Yao, K., Liu, Y. & Helm, M. Plasmonic Superlensing in Doped GaAs. Nano Letters 15, 1057-1061 (2015).